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1

the effect of the periphery of metal-semiconductor Schottky-barrier contacts on their electrical characteristics

N. A. Torkhov, V. A. Novikov

Journal:

Year:

2011

Language:

english

File:

PDF, 1.80 MB

english, 2011

2

“Consumable plasmotron” remelting (CPR)

B. E. Paton, K. S. El'tsov, V. I. Lakomskii, I. V. Sheiko, A. I. Pakhomov, G. F. Torkhov, A. N. Korotkov, E. I. Moshkevich, G. M. Grigorenko

Journal:

Year:

1974

Language:

english

File:

PDF, 371 KB

english, 1974

3

Effect of hydrogenation on the properties of metal-GaAs Schottky barrier contacts

V. G. Bozhkov, V. A. Kagadei, N. A. Torkhov

Journal:

Year:

1998

Language:

english

File:

PDF, 88 KB

english, 1998

4

Effect of the periphery of metal-semiconductor contacts with Schottky barriers on their static current-voltage characteristic

Journal:

Year:

2010

Language:

english

File:

PDF, 580 KB

english, 2010

5

Nature of forward and reverse saturation currents in metal—semiconductor contacts with the Schottky barrier

Journal:

Year:

2010

Language:

english

File:

PDF, 539 KB

english, 2010

6

Effect of photovoltage on current flow in metal-semiconductor schottky-barrier contacts

Journal:

Year:

2011

Language:

english

File:

PDF, 350 KB

english, 2011

7

The properties of chromium steels with a high nitrogen content

I. N. Mel'kumov, M. M. Klyuev, V. V. Topilin, G. F. Torkhov, V. I. Lakomskii

Journal:

Metal Science and Heat Treatment

Year:

1970

Language:

english

File:

PDF, 402 KB

english, 1970

8

Development of Melting and Thermomechanical-Processing Parameters for a High-Nitrogen Stainless Steel Prepared by Plasma-Arc Remelting

Torkhov, G. F., Latash, Yu. V., Fessler, R. R., Clauer, A. H., Fletcher, E. E., Hoffmanner, A. L.

Journal:

JOM Journal of the Minerals, Metals and Materials Society

Year:

1978

Language:

english

File:

PDF, 2.98 MB

english, 1978

9

Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier

Journal:

Year:

2018

Language:

english

File:

PDF, 3.12 MB

english, 2018

10

Influence of the Surface Morphology of the Microwave Microstrip Line on Its Transmission Performance

Torkhov, N. A., Kokolov, A. A., Babak, L. I.

Journal:

Year:

2020

File:

PDF, 980 KB

2020

11

Structure and properties of high-nitrogen corrosion-resistant austenitic steels

G. F. Torkhov, V. A. Slyshankova, E. A. Ul'yanin, A. V. Sherevera

Journal:

Metal Science and Heat Treatment

Year:

1978

Language:

english

File:

PDF, 454 KB

english, 1978

12

Production of large high-nitrogen steel ingots by consumable plasmatron remelting

B. E. Paton, K. S. El'tsov, V. I. Lakomskii, I. V. Sheiko, G. M. Grigorenko, G. F. Torkhov, A. N. Korotkov, A. I. Pakhomov, E. I. Moshkevich

Journal:

Year:

1976

Language:

english

File:

PDF, 302 KB

english, 1976

13

Effect of atomic hydrogen on the properties of metal-GaAs Schottky barrier contacts

V. G. Bozhkov, V. A. Kagadei, N. A. Torkhov

Journal:

Russian Physics Journal

Year:

1997

Language:

english

File:

PDF, 431 KB

english, 1997

14

Investigation into the effect of size of local metallization ofN-GaAs surface on the character of surface potential distribution determined by atomic-force microscopy

Yu. N. Nazarchuk, V. A. Novikov, N. A. Torkhov

Journal:

Russian Physics Journal

Year:

2011

Language:

english

File:

PDF, 386 KB

english, 2011

15

Influence of atomic-hydrogen treatment on the surface properties ofn-n+GaAs structures

N. A. Torkhov, S. V. Eremeev

Journal:

Year:

1999

Language:

english

File:

PDF, 1.15 MB

english, 1999

16

Current transport in the Me-n-n+Schottky-barrier structures

N. A. Torkhov, S. V. Eremeev

Journal:

Year:

2000

Language:

english

File:

PDF, 100 KB

english, 2000

17

Physicochemical properties of the surface and near-surface region of epitaxialn-GaAs layers modified by atomic hydrogen

N. A. Torkhov, S. V. Eremeev

Journal:

Year:

2000

Language:

english

File:

PDF, 342 KB

english, 2000

18

Influence of SiO2protective films on the diffusion of atomic hydrogen during the hydrogenation of epitaxialn-GaAs

A. V. Panin, N. A. Torkhov

Journal:

Year:

2000

Language:

english

File:

PDF, 458 KB

english, 2000

19

Effect of ballistic electron transport in metal-n-GaAs-n+-GaAs Schottky-barrier structures

Journal:

Year:

2001

Language:

english

File:

PDF, 102 KB

english, 2001

20

Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n+-GaAs Schottky barrier on hydrogenation

Journal:

Year:

2002

Language:

english

File:

PDF, 81 KB

english, 2002

21

Amorphization of the surface region in epitaxialn-GaAs treated with atomic hydrogen

N. A. Torkhov, I. V. Ivonin, E. V. Chernikov

Journal:

Year:

2002

Language:

english

File:

PDF, 254 KB

english, 2002

22

Formation of a native-oxide structure on the surface ofn-GaAs under natural oxidation in air

Journal:

Year:

2003

Language:

english

File:

PDF, 479 KB

english, 2003

23

Method to determine the interface’s fractal dimensions of metal-semiconductor electric contacts from their static instrumental characteristics

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2010

Language:

english

File:

PDF, 663 KB

english, 2010

24

Atomic force microscopy study of the potential distribution over a locally metallizedn-GaAs surface

N. A. Torkhov, V. G. Bozhkov, I. V. Ivonin, V. A. Novikov

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2009

Language:

english

File:

PDF, 546 KB

english, 2009

25

The effect of different treatments on fractal forms of gallium arsenide surface

V. G. Bozhkov, N. A. Torkhov, V. A. Novikov, N. V. Zemskova, V. A. Burmistrova

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Year:

2011

Language:

english

File:

PDF, 2.30 MB

english, 2011

26

Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy

V. G. Bozhkov, N. A. Torkhov, I. V. Ivonin, V. A. Novikov

Journal:

Year:

2008

Language:

english

File:

PDF, 449 KB

english, 2008

27

Determination of the fractal dimension for the epitaxialn-GaAs surface in the local limit

N. A. Torkhov, V. G. Bozhkova, I. V. Ivonin, V. A. Novikov

Journal:

Year:

2009

Language:

english

File:

PDF, 403 KB

english, 2009

28

Fractal character of the distribution of surface potential irregularities in epitaxialn-GaAs (100)

N. A. Torkhov, V. G. Bozhkov

Journal:

Year:

2009

Language:

english

File:

PDF, 363 KB

english, 2009

29

Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films

N. A. Torkhov, V. A. Novikov

Journal:

Year:

2009

Language:

english

File:

PDF, 266 KB

english, 2009

30

The nature of electrical interaction of Schottky contacts

Journal:

Year:

2011

Language:

english

File:

PDF, 793 KB

english, 2011

31

Reactivity of Nanocrystalline TiO2(Anatase and Rutile) Synthesized under Hydrothermal Conditions

Torkhov, D. S., Meskin, P. E., Kolen'ko, Yu. V., Ketsko, V. A., Burukhin, A. A., Churagulov, B. R., Oleinikov, N. N.

Journal:

Doklady Chemistry

Year:

2004

Language:

english

File:

PDF, 38 KB

english, 2004

32

Radio emission from the remnant of the supernova Cassiopeia-A

K. S. Stankevich, V. P. Ivanov, S. A. Pelyushenko, V. A. Torkhov, A. N. Ivannikova

Journal:

Radiophysics and Quantum Electronics

Year:

1973

Language:

english

File:

PDF, 852 KB

english, 1973

33

Measurement of zenith radiation temperature at a wavelength of 3.2 cm

K. S. Stankevich, V. P. Lastochkin, V. A. Torkhov

Journal:

Radiophysics and Quantum Electronics

Year:

1967

Language:

english

File:

PDF, 206 KB

english, 1967

34

The effects of meperidine and epidural analgesia in labor on maternal heart rate variability

A. Weissman, O. Torkhov, A.I. Weissman, A. Drugan

Journal:

International Journal of Obstetric Anesthesia

Year:

2009

Language:

english

File:

PDF, 256 KB

english, 2009

35

The effect of phase stabilization of microwave oscillations in nanosecond Gunn oscillators

Konev, V. Yu., Klimov, A. I., Kovalâchuk, O. B., Gubanov, V. P., Kozhevnikov, V. Yu., Kozyrev, A. V., Torkhov, N. A.

Journal:

Technical Physics Letters

Year:

2013

Language:

english

File:

PDF, 200 KB

english, 2013

36

The Ir-n-GaAs Schottky barrier contacts made by electrochemical deposition

Bozhkov, V. G., Shmargunov, A. V., Bekezina, T. P., Torkhov, N. A., Novikov, V. A.

Journal:

Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.49 MB

english, 2014

37

Assessment of the Ukrainian Quality Infrastructure: Challenges Imposed by the WTO and Commitments to EU Accession

Frota, M.N., Racine, J.L., Blanc, F., Rodrigues, P., Ibragimov, S., Torkhov, D., Osavolyuk, S.

Journal:

Key Engineering Materials

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

38

[IEEE 2014 24th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo) - Sevastopol, Ukraine (2014.9.7-2014.9.13)] 2014 24th International Crimean Conference Microwave & Telecommunication Technology - Anisotropy and frequency dependence determination of relative dielectric constant for sapphire and silicon carbide substrates

Torkhov, N. A., Salnikov, A. S., Minin, O. N., Kupreychik, A. F., Babak, L. I., Bozhkov, V. G.

Year:

2014

File:

PDF, 641 KB

2014

39

[IEEE 2014 24th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo) - Sevastopol, Ukraine (2014.9.7-2014.9.13)] 2014 24th International Crimean Conference Microwave & Telecommunication Technology - 3D-modeling elecrostatic system of Schottky contact

Torkhov, N. A., Salnikov, A. C., Kupreychik, A. F., Novikov, V. A., Minin, O. N., Babak, L. I.

Year:

2014

File:

PDF, 512 KB

2014

40

[IEEE 2014 24th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo) - Sevastopol, Ukraine (2014.9.7-2014.9.13)] 2014 24th International Crimean Conference Microwave & Telecommunication Technology - Dimension effect in a linear model of a Ka-band GaN HEMT

Torkhov, N. A., Salnikov, A. S., Bozhkov, V. G., Babak, L. I., Dobush, I. M., Novikov, V. A.

Year:

2014

File:

PDF, 531 KB

2014

41

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Fractal nature of resitance of the drain-dopped channel of the gan-based heterostructure of the field effect transistor with bidimensional electron gas

Torkhov, N A, Bozhkov, V G

Year:

2010

Language:

english

File:

PDF, 520 KB

english, 2010

42

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Fractal mode of distribution of surface potential of gate layer in gallium arsenide structure of field-effect transistor

Torkhov, N A, Bozhkov, V G, Novikov, V A, Ivonin, I V

Year:

2010

File:

PDF, 411 KB

2010

43

[IEEE 2014 24th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo) - Sevastopol, Ukraine (2014.9.7-2014.9.13)] 2014 24th International Crimean Conference Microwave & Telecommunication Technology - Effect of linear dimensions of the drain-source 2D-channel of AlGaN/GaN hemt on its static current-voltage characteristics (lateral size effect)

Torkhov, N. A., Bozhkov, V. G.

Year:

2014

File:

PDF, 366 KB

2014

44

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Impact of Schottky contacts on forward and reverse saturation currents

Year:

2010

Language:

english

File:

PDF, 284 KB

english, 2010

45

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Fractal mode of distribution of surface potential of gate layer in gallium arsenide structure of field-effect transistor

Torkhov, N A, Bozhkov, V G, Novikov, V A, Ivonin, I V

Year:

2010

Language:

english

File:

PDF, 411 KB

english, 2010

46

[IEEE 2014 24th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo) - Sevastopol, Ukraine (2014.9.7-2014.9.13)] 2014 24th International Crimean Conference Microwave & Telecommunication Technology - Fractality as a new nanotechnological direction of semiconductor material science

Year:

2014

File:

PDF, 328 KB

2014

47

[IEEE 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" (CriMiCo 2010) - Sevastopol (2010.9.13-2010.9.17)] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology" - Modified operating regime of gallium arsenide Gunn diodes with thin base

Torkhov, N. A., Bozhkov, V. G., Kozlova, A. V., Samoilov, V. I.

Year:

2010

File:

PDF, 603 KB

2010

48

Nature of size effects in compact models of field effect transistors

Torkhov, N. A., Babak, L. I., Kokolov, A. A., Salnikov, A. S., Dobush, I. M., Novikov, V. A., Ivonin, I. V.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.72 MB

english, 2016

49

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures

Journal:

Year:

2019

Language:

english

File:

PDF, 1.25 MB

english, 2019

50

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures

Journal:

Year:

2019

File:

PDF, 1.25 MB

2019